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Gate – Collector Charge turn-on.

IRG4PC50UD IGBT. Datasheet pdf – Equivalent

Soldering Temperature, for 10 sec. C unless otherwise specified. Mounting Torque, or M3 Screw. Ga te d rive a s spe cified.

Datasheet «IRG4PC50UD»

Industry standard TOAC package. Du ty c ycle: Gate – Emitter Charge turn-on. IGBT’s optimized for specific application conditions.

Tu rn -on lo sses inclu de. Industry standard TOAC package. Gate – Emitter Charge turn-on. Ga te d rive a s spe cified. T JJunction Temperature? Energy losses include “tail” and. T JJunction Temperature? Diode Peak Rate of Fall of Recovery.


Minimized recovery characteristics require. Pulsed Collector Current Q.

T Pulse width 5. Total Gate Charge turn-on.

Diode Forward Voltage Drop. V CE on typ. V CE on typ. Data and specifications subject to change without notice. D im en sion s in Irg4pv50ud illim eters a nd Inches.

Diode Reverse Recovery Time. Du ty c ycle: Junction-to-Ambient, typical socket mount.

IRG4PC50UD IGBT. Datasheet pdf. Equivalent

Diode Maximum Forward Current. Generation 4 IGBT’s offer highest efficiencies. Macro Waveforms for Figure 18a’s Test Circuit. Diode Continuous Forward Current. Diode Forward Voltage Drop. Macro Waveforms for Figure 18a’s Test Circuit.